2SB778 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

2SB778

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB778

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A

VBE(on) Base-Emitter On Voltage

IC= -5A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V ; IE=0

-2.5 V

-1.5 V

-10 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-10 μA

hFE

DC Current Gain

IC= -1A ; VCE= -5V

55

160

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

280

pF

fT

Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V

10

MHz

 hFE Classifications

R

O

55-110 80-160

isc website：www.iscsemi.cn

2

Share Link: