SMUN5311DW1T3G 데이터 시트보기 (PDF) - ON Semiconductor
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SMUN5311DW1T3G Datasheet PDF : 12 Pages
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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
nAdc
−
100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
nAdc
−
500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
mAdc
−
0.5
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Vdc
−
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
Vdc
−
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
35
60
−
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
V
−
0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (On)
(VCE = 0.2 V, IC = 10 mA) (NPN)
(VCE = 0.2 V, IC = 10 mA) (PNP)
Vi(off)
Vdc
−
1.2
−
−
1.2
−
Vi(on)
Vdc
−
2.0
−
−
2.2
−
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
Vdc
−
0.2
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
Vdc
−
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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