MTP15N06V 데이터 시트보기 (PDF) - ON Semiconductor

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MTP15N06V

Power MOSFET 15 Amps, 60 Volts N–Channel TO–220

ON Semiconductor 

MTP15N06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

–

67

–

Vdc

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

µAdc

–

–

10

–

–

100

IGSS

–

–

100

nAdc

VGS(th)

2.0

2.7

4.0

Vdc

–

5.0

–

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.5 Adc)

RDS(on)

–

0.08

0.12

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 15 Adc)

(ID = 7.5 Adc, TJ = 150°C)

VDS(on)

Vdc

–

2.0

2.2

–

–

1.9

Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)

gFS

4.0

6.2

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

–

469

660

pF

–

148

200

–

35

60

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 15 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

tr

td(off)

tf

–

7.6

20

ns

–

51

100

–

18

40

–

33

70

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 15 Adc,

VGS = 10 Vdc)

QT

–

14.4

20

nC

Q1

–

2.8

–

Q2

–

6.4

–

Q3

–

6.1

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 1.)

(IS = 15 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

Vdc

–

1.05

1.6

–

1.5

–

Reverse Recovery Time

(See Figure 14)

Reverse Recovery Stored

Charge

(IS = 15 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

ta

tb

QRR

–

59.3

–

ns

–

46

–

–

13.3

–

–

0.165

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

–

4.5

–

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

–

7.5

–

nH

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