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2SK4107 데이터 시트보기 (PDF) - Toshiba
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2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
Toshiba
2SK4107 Datasheet PDF : 6 Pages
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2SK4107
SAFE OPERATING AREA
1000
ID max (continuous)
100
ID max (pulse)
*
10
DC OPERATION
Tc
=
25°C
1 ms
*
100
μ
s
*
1
* Single pulse Ta = 25
℃
0.1
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
E
AS
– T
ch
1000
800
600
400
200
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
5.78 mH
Waveform
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-09-29
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