PHD108NQ 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHD108NQ Datasheet PDF : 12 Pages
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NXP Semiconductors
PHD108NQ03LT
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; see
resistance
Figure 10; see Figure 11
VGS = 5 V; ID = 25 A; Tj = 175 °C; see
Figure 10; see Figure 11
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 10; see Figure 11
RG
internal gate resistance f = 1 MHz; Tj = 25 °C
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS1
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Tj = 25 °C; see Figure 12; see Figure 13
ID = 0 A; VDS = 0 V; VGS = 4.5 V;
Tj = 25 °C
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Tj = 25 °C; see Figure 12; see Figure 13
QGS2
post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 12 V; Tj = 25 °C; see
Figure 12; see Figure 13
Ciss
input capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 0 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
Coss
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Crss
reverse transfer
Tj = 25 °C; see Figure 14
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 15
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
-
6.7 7.5 mΩ
-
12.1 13.5 mΩ
-
5.3 6
mΩ
-
1.2 -
Ω
-
16.3 -
nC
-
12.5 -
nC
-
4
-
nC
-
2.5 -
nC
-
1.5 -
nC
-
5.6 -
nC
-
2.4 -
V
-
1375 -
pF
-
2120 -
pF
-
640 -
pF
-
250 -
pF
-
15
-
ns
-
38
-
ns
-
32
-
ns
-
25
-
ns
-
0.86 1.2 V
-
34
-
ns
-
21
-
nC
PHD108NQ03LT_4
Product data sheet
Rev. 04 — 5 June 2009
© NXP B.V. 2009. All rights reserved.
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