BD136 데이터 시트보기 (PDF) - Philips Electronics
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BD136 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP power transistors
Product specification
BD136; BD138; BD140
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
Note
1. Refer to TO-126 (SOT32) standard mounting conditions.
CONDITIONS
note 1
VALUE
100
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BD136-10; BD138-10; BD140-10
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 125 °C
IC = 0; VEB = −5 V
VCE = −2 V; (see Fig.2)
IC = −5 mA
IC = −150 mA
IC = −500 mA
IC = −150 mA; VCE = −2 V;
(see Fig.2)
BD136-16; BD138-16; BD140-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IC = −500 mA; IB = −50 mA
IC = −500 mA; VCE = −2 V
IC = −50 mA; VCE = −5 V;
f = 100 MHz
DC current gain ratio of the
complementary pairs
IC = 150 mA; VCE = 2 V
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−10 µA
−
−
−100 nA
40 −
−
63 −
250
25 −
−
63 −
160
100 −
250
−
−
−0.5 V
−
−
−1 V
−
160 −
MHz
−
1.3 1.6
1999 Apr 12
3
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