2N5671 데이터 시트보기 (PDF) - Comset Semiconductors
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2N5671 Datasheet PDF : 3 Pages
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NPN 2N5671 – 2N5672
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.
They are especially intended for high current, fast switching industrial applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
VCER
IC
IB
PD
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
VEB = -1.5V, REB = 50 Ω
Collector-Emitter Voltage
REB <= 50 Ω
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
@ TC = 25°
Storage Temperature
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
Value
90
120
120
150
7.0
120
150
110
140
30
10
140
Unit
V
V
V
V
V
A
A
Watts
200
°C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
2N5671
2N5672
Value
1.25
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
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