RN2101ACT 데이터 시트보기 (PDF) - Toshiba

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RN2101ACT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101ACT ~ RN2106ACT

RN2101ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

25

-1

-25

-0.1

-0.1

-1

-10

-100

INPUT VOLTAGE 　VI (ON) (V)

RN2103ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

-1

25

-25

RN2102ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

25

-1

-25

-0.1

-0.1

-1

-10

INPUT VOLTAGE 　VI (ON) (V)

RN2104ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

25

-25

-1

-100

-0.1

-0.1

-1

-10

-100

INPUT VOLTAGE 　VI (ON) (V)

RN2105ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

-1

25

-25

-0.1

-0.1

-1

-10

-100

INPUT VOLTAGE 　VI (ON) (V)

-0.1

-0.1

-1

-10

INPUT VOLTAGE 　VI (ON) (V)

RN2106ACT

-100

IC - VI (ON)

COMMON EMITTER

VCE = -0.2V

-10

Ta=100°C

-100

-1

-0.1

-0.1

25

-25

-1

-10

INPUT VOLTAGE 　VI (ON) (V)

-100

3

2009-04-17

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