SPP15N60CFD(2007) 데이터 시트보기 (PDF) - Infineon Technologies
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SPP15N60CFD Datasheet PDF : 12 Pages
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9 Typ. gate charge
V GS=f(Q gate); I D=13.4 A pulsed
parameter: V DD
10
120 V
8
480 V
6
4
2
SPP15N60CFD
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
150 °C, 98%
25 °C
101
150 °C
25 °C, 98%
100
0
0
20
40
60
Q gate [nC]
11 Avalanche SOA
I AR=f(t AR)
parameter: T j(start)
14
10-1
80
0
0.5
1
1.5
V SD [V]
12 Avalanche energy
E AS=f(T j); I D=6.7 A; V DD=50 V
480
12
420
360
10
300
8
240
6
125 °C
25 °C
180
4
120
2
60
0
10-3 10-2 10-1 100 101 102 103 104
t AR [µs]
0
25
Rev. 1.2
page 7
75
125
T j [°C]
2
175
2007-08-28
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