IRFZ34N(1995) 데이터 시트보기 (PDF) - International Rectifier
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IRFZ34N Datasheet PDF : 8 Pages
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IRFZ34N
1200
1000
800
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Ciss Coss = Cds + Cgd
Coss
400
Crss
200
0
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 16A
16
VDS = 44V
VDS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
1
VGS = 0V A
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10ms
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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