2SD560 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SD560 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=3A; IB=3mA
VCB=100V; IE=0
VEB=5V; IC=0
IC=3A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A;IB1=-IB2=3mA
VCC=50V;RL=16.7?
hFE-1 Classifications
R
O
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SD560
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
1
µA
3
mA
2000 6000 15000
500
1.0
µs
3.5
µs
1.2
µs
2
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