2SB512 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SB512

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.5A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SB512

MIN TYP. MAX UNIT

-60

V

-60

V

-6

V

-1.0

V

-1.5

V

-1.0 μA

-1.0 μA

60

320

3

MHz

2

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