2SB1228 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1228 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1228
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
-110
V
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞
-100
V
VCEsat Collector-emitter saturation voltage IC=-4A ; IB=-8mA
-1.0 -1.5
V
VBEsat Base-emitter saturation voltage
IC=-4A ; IB=-8mA
-2.0
V
ICBO
Collector cut-off current
VCB=-80V;IE=0
-0.1 mA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0 mA
hFE
DC current gain
IC=-4A ; VCE=-3V
1500 4000
体 fT
Transition frequency
固I电NC半H导ANGE SEMICONDUCTOR Switching times
ton
Turn-on time
tstg
Storage time
IC=-4A ; VCE=-5V
IC=500IB1=-500IB2=-4A
VCC=-50V ,RL=12.5Ω
20
MHz
0.7
μs
1.4
μs
tf
Fall time
1.5
μs
2
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