VN2406D 데이터 시트보기 (PDF) - Vishay Semiconductors
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VN2406D Datasheet PDF : 5 Pages
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TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 5 V
TJ = 150_C
1
Capacitance
400
VGS = 0 V
f = 1 MHz
300
0.1
25_C
0.01
0.3
15.0
12.5
–55_C
0.7
1.1
1.5
VGS – Gate-to-Source Voltage (V)
Gate Charge
ID = 0.5 A
10.0
7.5
5.0
VDS = 120 V
192 V
2.5
0
0
400
800
1200
1600
2000
Qg – Total Gate Charge (pC)
Drive Resistance Effects on Switching
100
VDD = 60 V
RL = 150 W
ID = 0.4 A
td(off)
200
Ciss
100
Coss
Crss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
VDS = 60 V
RG = 25 W
td(off)
tf
10
td(on)
tr
1
0.01
0.1
1
ID – Drain Current (A)
Source-Drain Diode Forward Voltage
1
10
tf
td(on)
tr
1
1
2
5
10
20
50 100
RG – Gate Resistance (W)
www.vishay.com
11-4
TJ = 150_C
0.1
TJ = 25_C
0.01
0
0.5
1.0
1.5
2.0
2.5
VSD – Source-Drain Voltage (V)
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
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