ZXMN10A08E6TC 데이터 시트보기 (PDF) - Zetex => Diodes

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ZXMN10A08E6TC

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A08E6

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

td(on)

tr

td(off)

tf

Qg

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Qg

Qgs

Qgd

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

MIN.

100

2.0

TYP. MAX. UNIT CONDITIONS.

V ID=250␮A, VGS=0V

0.5 ␮A VDS=100V, VGS=0V

100 nA VGS=Ϯ20V, VDS=0V

V ID=250␮A, VDS= VGS

0.25 ⍀ VGS=10V, ID=3.2A

0.30 ⍀ VGS=6V, ID=2.6A

5.0

S VDS=15V,ID=3.2A

405

pF

28.2

pF

VDS=50 V, VGS=0V,

f=1MHz

14.2

pF

3.4

ns

2.2

ns VDD =30V, ID=1.2A

8

ns RG≅6.0⍀, VGS=10V

3.2

ns

4.2

nC VDS=50V,VGS=5V,

ID=1.2A

7.7

nC

1.8

nC

VDS=50V,VGS=10V,

ID=1.2A

2.1

nC

0.87 0.95

27

32

V TJ=25°C, IS=3.2A,

VGS=0V

ns TJ=25°C, IF=1.2A,

nC di/dt= 100A/␮s

NOTES

(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 5 - JANUARY 2005

SEMICONDUCTORS

4

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