VB30150C-M3 데이터 시트보기 (PDF) - Vishay Semiconductors
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VB30150C-M3 Datasheet PDF : 4 Pages
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VB30150C-M3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJC
VB30150C
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VB30150C-M3/4W
1.39
TO-263AB
VB30150C-M3/8W
1.39
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
30
20
10
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
14
D = 0.8
D = 0.5
12
D = 0.3
10
D = 0.2
8
D = 0.1
6
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
100
10
TA = 150 °C
TA = 125 °C
1
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 22-May-13
2
Document Number: 87995
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