2SB1503 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1503 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -7A;IB= -7mA
VeE(sat) Base-Emitter Saturation Voltage
lo= -7A; IB= -7mA
ICBO
Collector Cutoff Current
VGB=-160V;IE=0
ICEO
Collector Cutoff Current
VCE=-140V; IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
hpE-2
fl
DC Current Gain
Current-Gain—Bandwidth Product
lc= -7A; VCE= -5V
lc=-0.5A;VCE=-10V
Switching Times
ton
Turn-on Time
Utg
Storage Time
tf
Fall Time
lc= -7A; IB1= -\B2- -7mA,
Vcc= -50V
hpE-2 Classifications
Q
S
P
5000-15000 7000-21000 8000-30000
2SB1503
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-100
uA
-100
uA
-100
uA
2000
5000
30000
20
MHz
1.0
us
1.5
us
1.2
11 S
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