IRF720(2014) 데이터 시트보기 (PDF) - Vishay Semiconductors

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IRF720
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRF720, SiHF720

Vishay Siliconix

101

150 °C

100

25 °C

10-1

0.4

91043_07

VGS = 0 V

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

102

5

2

10

5

2

1

5

2

0.1

5

2

10-2

0.1 2

Operation in this area limited

by RDS(on)

TC = 25 °C

TJ = 150 °C

Single Pulse

5 1 2 5 10 2 5 102 2

10 µs

100 µs

1 ms

10 ms

5 103

91043_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

25

91043_09

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

0 − 0.5

1

0.2

0.1

0.05

0.1 0.02

0.01

Single Pulse

(Thermal Response)

10-2

10-5

10-4

10-3

10-2

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

0.1

1

10

91043_11

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S14-2355-Rev. C, 08-Dec-14

4

Document Number: 91043

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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