2N6667 데이터 시트보기 (PDF) - ON Semiconductor

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2N6667

Darlington Silicon Power Transistors

ON Semiconductor 

2N6667, 2N6668

3

2.5

TJ = 25°C

2

1.5

VBE(sat) @ IC/IB = 250

1

0.5

0.1

VBE @ VCE = 3 V

VCE(sat) @ IC/IB = 250

0.2 0.3 0.5 0.7 1

23

IC, COLLECTOR CURRENT (AMPS)

5 7 10

Figure 11. Typical “On” Voltages

+ 5

+ 4

hFE @ VCE  +  3.0 V

+ 3

*IC/IB ≤

3

+ 2

25°C to 150°C

+ 1

- 55°C to 25°C

0

- 1

∗θVC for VCE(sat)

- 2

- 3 θVB for VBE

25°C to 150°C

- 4

- 55°C to 25°C

- 5

0.1

0.2 0.3 0.5 0.7 1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMP)

Figure 12. Typical Temperature Coefficients

105

REVERSE

FORWARD

104

103

VCE = 30 V

102

101

100

10- 1

+ 0.6

TJ = 150°C

100°C

25°C

+ 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

- 1.2 - 1.4

Figure 13. Typical Collector Cut−Off Region

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5

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