D45C10 데이터 시트보기 (PDF) - New Jersey Semiconductor
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D45C10 Datasheet PDF : 3 Pages
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Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEsat
Collector-emitter
saturation voltage
D45C2.3.5.6.8.9.11.12
D45C 1.4.7. 10
lc=-1A :lB-50mA
IC=.1A:IB-0.1A
VeEsat Base-emitter saturation voltage
IC-1A:IB-0.1A
ICES
Collector cut-off current
VCE=Rated VCES
IEBO
Emitter cut-off current
VEB^5V: lc=0
hpE-1
DC current gain
D45C2 3 5 6 8 9 11.12
D45C1.4.7.10
lc=-0.2A:VCE^1V
hFE-2
DC current gain
D45C1. 4.7.10
D45C2.5.8.11
lc=-1A:VCE^1V
D45C3.6.9.12
fr
Transition frequency
Switching times
IC=-2A : VCE-1V
lc=-20mA:VcE-4V:
f= 1.0MHz
tr
Rise time
ts
Storage time
tf
Fall time
lc=-1.0A;Vcc=-20V
|B1=-|B2=-0.1A
D45C Series
MIN TYP. MAX UNIT
-0.5
V
-1.3
V
-100 M A
-10
MA
40
120
25
10
20
20
40
MHz
0.2
Ps
0.6
MS
0.3 n s
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