AT-42070 데이터 시트보기 (PDF) - Avago Technologies
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AT-42070 Datasheet PDF : 5 Pages
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AT-42070
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-42070 is a general purpose NPN bipolar
transistor that offers excellent high frequency performance.
The AT‑42070 is housed in a hermetic, high reliability gold-
ceramic 70 mil microstrip package. The 4 micron emitter-
to-emitter pitch enables this transistor to be used in many
different functions. The 20 emitter finger interdigitated
geometry yields a medium sized transistor with impedances
that are easy to match for low noise and medium power
applications. This device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in the
VHF, UHF, and microwave frequencies. An optimum noise
match near 50Ω up to 1 GHz, makes this device easy to use
as a low noise amplifier.
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package
The AT-42070 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
70 mil Package
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