2SC3356 데이터 시트보기 (PDF) - Guilin Strong Micro-Electronics Co., Ltd.

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2SC3356

High-Frequency Amplifier Transistor

Guilin Strong Micro-Electronics Co., Ltd. 

GM3356

桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

■ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Emitter Cutoff Current

發射極截止電流(VEB=1.0v,IC=0)

Collector Cutoff Current

集電極截止電流(VCB=10v,IE=0)

Collector-Base Breakdown Voltage

集電極基極擊穿電壓(Ic=10uA)

Collector-Emitter Breakdown Voltage

集電極發射極擊穿電壓(Ic=1mA)

Emitter-Base Breakdown Voltage

發射極基極擊穿電壓(IE=10uA)

DC Current Gain 直流電流增益

(VCE=10v,IC=20mA)

Gain Bandwidth Product

增益帶寬乘積(VCE=10v,IC=20mA)

Noise Figure 噪声係數

(V CE=10V,Ic=7mA,f=1.0GHz)

Feed-Back Capacitance 反馈電容

(VCB=10v,IE=0,f=1.0MHz)

Symbol

Min

Typ

Max Unit

符號 最小值 典型值 最大值 單位

IEBO

—

—

1.0

μA

ICBO

—

—

1.0

μA

V(BR)CBO

20

—

—

V

V(BR)CEO

12

—

—

V

V(BR)EBO

3

—

—

V

HFE

50

—

300

fT

—

7000

—

MHz

NF

—

—

2.0

dB

Cre

—

0.55

1.0

pF

1. FR-5=1.0×0.75×0.062in.

2. Alumina=0.4×0.3×0.024in.99.5%alumina.

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