2N3789 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N3789

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2N3789

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=-200mA; IB= 0

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A

VBE(ON)-1 Base-Emitter On Voltage

IC=-5A; VCE=-2V

VBE(ON)-2 Base-Emitter On Voltage

IC=-10A; VCE=-4V

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

hFE-2

DC Current Gain

IC= -3A; VCE= -2V

fT

Current Gain-Bandwidth Product

*:Pulse test:Pulse width=300us,duty cycle≤2%

IC= -0.5A; VCE= -10V; f= 1.0MHz

MIN MAX UNIT

-60

V

-5

mA

-1.0

V

-2.0

V

-4.0

V

25

90

15

4

MHz

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