SI2302 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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SI2302 Datasheet PDF : 3 Pages
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Plastic-Encapsulate Mosfets
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
VDS = 10V, ID = 3.6A, VGS =
4.5V
6
10
nC
1.4
nC
1.8
nC
Drain-Source Diode Forward Current c
Drain-Source Diode Forward Voltage d
IS
VSD
VGS = 0V, IS = 0.94A
0.94
A
1.2
V
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board,t<10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
SI2302 Typical Characteristics
10
VGS=4.5,3.5,2.5V
8
6
VGS=2.0V
4
2
VGS=1.5V
0
0
1
2
3
4
5
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400
300
Ciss
200
Coss
100
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
10
25 C
8
6
4
2
TJ=125 C
-55 C
0
0
1
2
3
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=3.6A
1.9 VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P3-P2
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