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BAV170

Low-leakage double diode

Philips Electronics 

Philips Semiconductors

Low-leakage double diode

Product specification

BAV170

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on a FR4 printed-circuit board.

CONDITIONS

note 1

GRAPHICAL DATA

handboo3k,0h0alfpage

IF

(mA)

200

(1)

MBG521

300

handbook, halfpage

IF

(mA)

200

VALUE

360

500

UNIT

K/W

K/W

MLB752 - 1

(1)

(2)

(3)

100

100

(2)

0

0

100

Tamb (oC)

200

Device mounted on a FR4 printed-circuit board.

(1) Single diode loaded.

(2) Double diode loaded.

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

0

0

0.4

0.8

1.2

1.6

VF (V)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

Fig.3 Forward current as a function of forward

voltage; per diode.

2003 Mar 25

4

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