2SD1899-Z 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1899-Z

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1899-Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA

VBE(sat)NOTE Base-Emitter Saturation Voltage

IC= 1.5A; IB= 150mA

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1NOTE

DC Current Gain

IC= 0.2A; VCE= 2V

hFE-2NOTE

DC Current Gain

IC= 0.6A; VCE= 2V

hFE-3NOTE

DC Current Gain

IC= 2A; VCE= 2V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product

NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse

IC= 1.5A; VCE= 5V

 hFE-2 Classifications

M

L

K

100-200 160-320 200-400

MIN TYP. MAX UNIT

0.25 V

1.2

V

10 μA

10 μA

60

100

400

50

30

pF

120

MHz

isc website：www.iscsemi.com

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