S8550 데이터 시트보기 (PDF) - Guilin Strong Micro-Electronics Co., Ltd.

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S8550

Low Frequency Power Amplifier

Guilin Strong Micro-Electronics Co., Ltd. 

桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

S8550

■ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Test Condition

測試條件

Min. Typ. Max. Unit

最小值 典型值 最大值 單位

Collector Cutoff Current

集電極截止電流

ICBO

Emitter Cutoff Current

發射極截止電流

IEBO

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓

V(BR)CBO

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

V(BR)CEO

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

V(BR)EBO

DC Current Gain

直流電流增益

HFE(1)

HFE(2)

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

VCE(sat)

VCB=-30V,IE=0

VEB=-5V,IC=0

IC=-100μA

IC=-10mA

IE=-100μA

VCE=-1V,

IC=-100mA

VCE=-1V,

Ic=-500mA

IC=-500mA,

IB=-50mA

—

—

-0.1 μA

—

—

-0.1 μA

-40

—

—

V

-25

—

—

V

-5

—

—

V

85

—

400

—

40

—

—

—

—

-0.6 V

Base-Emitter Saturation Voltage

基極-發射極飽和壓降

VBE(sat)

Base-Emitter Voltage

基極-發射極電壓

VBE

Transition Frequency

特徵頻率

fT

Collector Output Capacitance

輸出電容

Cob

IC=-500mA,

IB=-50mA

VCE=-1V,

IC=-10mA

VCE=-5V,

IC=-10mA

VCB=-10V,IE=0,

f=1MHz

—

—

-1.2 V

—

-0.8 -1.0 V

100

120

— MHz

—

13

30

pF

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