STGW25M120DF3 데이터 시트보기 (PDF) - STMicroelectronics

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STGW25M120DF3

Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

STMicroelectronics 

STGW25M120DF3, STGWA25M120DF3

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VCES Collector-emitter voltage (VGE = 0)

IC

Continuous collector current at TC = 25 °C

IC

ICP(1)

Continuous collector current at TC = 100 °C

Pulsed collector current

VGE Gate-emitter voltage

IF

Continuous forward current at TC = 25 °C

IF

IFP(1)

Continuous forward current at TC = 100 °C

Pulsed forward current

PTOT Total dissipation at TC = 25 °C

TSTG Storage temperature range

TJ

Operating junction temperature

1. Pulse width limited by maximum junction temperature.

1200

50

25

100

±20

50

25

100

375

- 55 to 150

- 55 to 175

Symbol

RthJC

RthJC

RthJA

Table 3. Thermal data

Parameter

Thermal resistance junction-case IGBT

Thermal resistance junction-case diode

Thermal resistance junction-ambient

Value

0.4

0.96

50

Unit

V

A

A

A

V

A

A

A

W

°C

°C

Unit

°C/W

°C/W

°C/W

DocID026223 Rev 2

3/18

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