MPS6601RLRAG(2006) 데이터 시트보기 (PDF) - ON Semiconductor
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MPS6601RLRAG Datasheet PDF : 8 Pages
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MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPS6601/6651
25
−
MPS6602/6652
40
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
MPS6601/6651
25
−
MPS6602/6652
40
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)EBO
4.0
−
MPS6601/6651
MPS6602/6652
MPS6601/6651
MPS6602/6652
ICES
ICBO
−
0.1
−
0.1
−
0.1
−
0.1
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
50
−
50
−
30
−
VCE(sat)
−
0.6
VBE(on)
−
1.2
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
(VCC = 40 Vdc, IC = 500 mAdc,
tr
IB1 = 50 mAdc,
tp w 300 ns Duty Cycle)
ts
tf
−
25
−
30
−
250
−
50
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
−
Vdc
Vdc
MHz
pF
ns
ns
ns
ns
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