2SB1326TV2_REVA 데이터 시트보기 (PDF) - ROHM Semiconductor
부품명
상세내역
제조사
2SB1326TV2_REVA Datasheet PDF : 5 Pages
| |||
Transistors
2SB1386 / 2SB1412 / 2SB1326
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
2SB1386
Collector power 2SB1412
PC
dissipation
2SB1326
Junction temperature
Tj
−5
A(DC)
−10
A(Pulse) ∗1
0.5
W
2
W ∗2
1
W
10
W(Tc=25°C)
1
W ∗3
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −30
Collector-emitter breakdown voltage BVCEO −20
Emitter-base breakdown voltage
BVEBO
−6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current
transfer ratio
2SB1386,2SB1412
hFE
2SB1326
82
120
Transition frequency
Output capacitance
∗ Measured using pulse current.
fT
−
Cob
−
Typ.
−
−
−
−
−
0.35
−
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
390
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −4A/ −0.1A
∗
VCE= −2V, IC= −0.5A
∗
∗
VCE= −6V, IE=50mA, f=100MHz
VCB= −20V, IE=0A, f=1MHz
zPackaging specifications and hFE
Package
Code
Type
2SB1386
Basic ordering
hFE unit (pieces)
PQR
2SB1412 PQR
2SB1326 QR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
Rev.A
2/4
Share Link: 