NZT560(1998) 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
NZT560 Datasheet PDF : 7 Pages
| |||
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
60
V
80
V
5
V
100 nA
10
uA
100 nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 mA, VCE = 2 V
70
-
IC = 500 mA, VCE = 2 V NZT560
100 300
NZT560A 250 550
IC = 1 A, VCE = 2 V
80
IC = 3 A, VCE = 2 V
25
IC = 1 A, IB = 100 mA
IC = 3 A, IB = 300 mA
NZT560
NZT560A
300 mV
450
400
IC = 1 A, IB = 100 mA
1.25
V
IC = 1 A, VCE = 2 V
1
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
fT
Transition Frequency
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, IE = 0, f = 1MHz
30
pF
IC = 100 mA,VCE = 5 V, f=100MHz 75
-
© 1998 Fairchild Semiconductor Corporation
Nzt560.lwpPrNA 7/10/98 revC
Share Link: 