NGTB15N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB15N120FL2WG Datasheet PDF : 11 Pages
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NGTB15N120FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.51
0.81
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 15 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Min
1200
−
−
4.5
−
−
−
Typ
−
2.00
2.40
5.65
−
−
−
Max
−
2.40
−
6.5
0.4
4.0
200
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 15 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
−
2640
−
pF
−
88
−
−
50
−
−
109
−
nC
−
23
−
−
51
−
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
TJ = 25°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15 V
TJ = 150°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
−
64
−
ns
−
104
−
−
132
−
−
173
−
−
1.20
−
mJ
−
0.37
−
−
1.57
−
−
62
−
ns
−
126
−
−
138
−
−
300
−
−
1.45
−
mJ
−
0.76
−
−
2.21
−
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 15 A
VF
−
2.00 2.60
V
VGE = 0 V, IF = 50 A, TJ = 175°C
−
2.30
−
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/ms
trr
−
110
−
ns
Qrr
−
0.69
−
mc
Irrm
−
11
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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