DTA114Y
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-40~+6
V
Output Current
IOUT
IC(MAX)
-70
mA
-100
mA
SOT-523
150
mW
Power Dissipation
SOT-23/SOT-323
PD
200
mW
Junction Temperature
Storage Temperature
TO-92
TJ
TSTG
625
mW
+150
℃
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-23
Junction to Ambient
SOT-323
SOT-523
TO-92
SOT-23
Junction to Case
SOT-323
SOT-523
TO-92
SYMBOL
θJA
θJC
RATINGS
302
315
318
183
145
143
130
89
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Input Voltage
VIN(OFF) VCC=-5V, IOUT=-100μA
VIN(ON) VOUT=-0.3V, IOUT=-1mA
-1.4
Output Voltage
VOUT (ON) IOUT/IIN=-5mA/-0.25mA
Input Current
IIN
VIN=-5V
Output Current
IOUT(OFF) VCC=-50V, VIN=0V
DC Current Gain
hFE VOUT=-5V, IOUT=-5mA
68
Input Resistance
R1
7
Resistance Ratio
R2/R1
3.7
Transition Frequency
fT
VCE=-10V, IE=5mA, f=100MHz(Note)
Note: Transition frequency of the device
TYP
-0.1
10
4.7
250
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
MAX
-0.3
-0.3
-0.88
-0.5
UNIT
V
V
V
mA
μA
13 KΩ
5.7
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-073,G