SKM50GAL123D_ 데이터 시트보기 (PDF) - Semikron

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SKM50GAL123D_

SEMITRANS® M IGBT Modules

Semikron 

SKM 50 GB 123 D…

9*( >9@



;54



9



9





















 

4*>Q&@

Fig. 13 Typ. gate charge characteristic

W >QV@



;54

WGRII



WGRQ

WU

WI

C [nF]

100

ICpuls = 50 A

10

502C.vpo

VGE = 0 V

f = 1 MHZ

Ciss

1

Coss

Crss

0,1

0

10

20

30

Fig. 14 Typ. capacitances vs.VCE

40

VCE [V]

W >QV@



Tj = 125 °C

VCE = 600 V

VGE = + 15 V

RGon = 27 Ω

RGoff = 27 Ω

induct. load 

;54

WGRII

WGRQ

WU

Tj = 125 °C

VCE = 600 V

VGE = + 15 V

IC = 40 A

induct. load

WI



     

,& >$@

Fig. 15 Typ. switching times vs. IC

Fig. 17 Typ. CAL diode forward characteristic

B 6 – 84













5* >:@

Fig. 16 Typ. switching times vs. gate resistor RG



P-

'&&   '

%M  S

'*(  ['





0*%;/6

#*

 Ω

 Ω

 Ω

 Ω

60 Ω



(411



 , 





 $ 

Fig. 18 Diode turn-off energy dissipation per pulse

0898

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