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K6R1016C1D(2001) 데이터 시트보기 (PDF) - Samsung
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제조사
K6R1016C1D
(Rev.:2001)
64K x 16 Bit High-Speed CMOS Static RAM
Samsung
K6R1016C1D Datasheet PDF : 11 Pages
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11
K6R1016C1D
PACKAGE DIMENSION
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
B
#A1
Side View
D
C
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.08
PRE
P
L
r
I
e
M
li
I
m
N
i
A
na
R
ry
Y
CMOS SRAM
Unit: millimeters
Bottom View
B
B1
6
A
B
C
D
E
F
G
H
5 4 3 21
B/2
Detail A
A
Y
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ: Typical
5. Y is coplanarity: 0.08(Max)
- 11
Revision 0.3
December 2001
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