RB151 데이터 시트보기 (PDF) - CHONGQING PINGYANG ELECTRONICS CO.,LTD

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RB151

SINGLE-PHASE SILICON BRIDGE RECTIFIER

CHONGQING PINGYANG ELECTRONICS CO.,LTD 

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

RB151 THRU RB157

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE：50-1000V

CURRENT：1.5A

FEATURES

·Surge overload ratings-50 Amperes

·Good for printed circuit board assembly

RB-15

.150(3.8) .360(9.1)

.130(3.3) .340(8.6)

.220(5.6)

.180(4.6)

MECHANICAL DATA

·Case: Plastic shell with plastic encapsulation

·Epoxy: UL 94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity: As marked

·Mounting position: Any

·Weight: 1.04 grams

1.2

(30.5)

MIN.

1.0

25.4

MIN.

.220(5.6)

.180(4.6)

.032(0.8)

.028(0.7)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL RB151 RB152 RB153 RB154 RB155 RB156 RB157 units

Maximum Recurrent Peak Reverse Voltage

VRRM 50 100 200 400 600 800 1000 V

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

VRMS 35 70 140 280 420 560 700 V

VDC 50 100 200 400 600 800 1000 V

Maximum Average Forward rectified Output

Current at TA=25°C

Io

1.5

A

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC IFSM

50

A

method)

Maximum Forward Voltage Drop per element at

1.0A DC

VF

1.0

V

Maximum DC Reverse Current

at Rated DC Blocking Voltage

per element

I2t Rating for Fusing (t﹤8.3ms)

@ TA=25°C

IR

@ TA=100°C

I2t

10

µA

500

10

A2S

Typical Junction Capacitance (Note 1)

CJ

Typical Thermal Resistance (Note 2)

RθJA

25

pF

40

°C/W

Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance from Junction to lead mounted on P.C.B with 0.5×0.5”(13×13mm) copper pads

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