IXTH10N100 IXTH12N100
IXTM10N100 IXTM12N100
Fig.7 Gate Charge Characteristic Curve
10
9
8
7
6
5
4
3
2
1
0
0
VDS = 500V
ID = 6A
IG = 10mA
25 50
75 100 125 150
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
Ciss
f = 1MHz
VDS = 25V
Coss
Crss
5
10
15
20
VDS - Volts
Fig.11 Transient Thermal Impedance
1
Fig.8 Forward Bias Safe Operating Area
10µs
10 Limited by RDS(on)
1
100µs
1ms
10ms
100ms
0.1
1
10
100
1000
VDS - Volts
Fig.10 Source Current vs. Source
to Drain Voltage
20
18
16
14
12
10
8
TJ = 125°C
6
4
TJ = 25°C
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
D=0.5
0.1 D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
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