BD2066FJ-E2_11 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD2066FJ-E2_11 Datasheet PDF : 17 Pages
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BD2062FJ,BD2066FJ
Technical Note
●Electrical Characteristics
○BD2062FJ (Unless otherwise specified VIN = 5.0V, Ta = 25℃)
Parameter
Symbol
Min.
Limits
Typ.
Operating current
IDD
-
130
Max.
180
Standby current
/EN input voltage
/EN input current
ISTB
-
0.01
1
V/EN
2.0
-
-
V/EN
-
-
0.8
I/EN
-1.0
0.01
1.0
/OC output low voltage
V/OCL
-
-
0.5
/OC output leak current
IL/OC
-
0.01
1
/OC delay time
T/OC
10
15
20
On-resistance
RON
-
80
125
Switch leak current
ILSW
-
-
1.0
Reverse leak current
ILREV
-
-
1.0
Current limit threshold
ITH
1.5
2.4
3.0
Short circuit current
ISC
1.1
1.5
2.1
Output rise time
TON1
-
0.8
10
Output turn-on time
TON2
-
1.1
20
Output fall time
TOFF1
-
5
20
Output turn-off time
UVLO threshold
TOFF2
-
10
40
VTUVH
2.1
2.3
2.5
VTUVL
2.0
2.2
2.4
Unit
Conditions
μA V/EN = 0V , OUT=OPEN
μA V/EN = 5V , OUT=OPEN
V High input
V Low input
μA V/EN = 0V or V/EN = 5V
V I/OC = 1mA
μA V/OC = 5V
ms
mΩ IOUT = 500mA
μA V/EN = 5V, VOUT = 0V
μA VOUT = 5.5V, VIN = 0V
A
A
VOUT = 0V
CL = 47μF (RMS)
ms RL = 10Ω
ms RL = 10Ω
μs RL = 10Ω
μs RL = 10Ω
V Increasing VIN
V Decreasing VIN
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3/16
2011.05 - Rev.B
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