S593T(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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S593T Datasheet PDF : 9 Pages
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S593T/S593TR/S593TRW
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250
40
VDS=5V
f=200MHz
200
30
150
20
100
10
50
0
0
95 10759
25 50 75 100 125 150
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
20
0
0
1
2
3
4
95 11164
VG2S – Gate 2 Source Voltage ( V )
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
4
16
12
VG2S=4V
8
3V
2V
4
0
1V
0
1
2
3
4
5
95 11162
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
20
VDS=5V
16
12
8
4
0
0
1
2
3
4
95 11163
VG2S – Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
3
2
1
VDS=5V
f=200MHz
0
01
2
3
4
5
6
95 11165
VG2S – Gate 2 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
2
1.5
1
0.5
VG2S=4V
f=200MHz
0
3
4
5
6
7
95 11166
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
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4 (9)
Document Number 85047
Rev. 3, 20-Jan-99
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