PDTA124EEF 데이터 시트보기 (PDF) - Philips Electronics
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PDTA124EEF Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA124EEF
FEATURES
• Built-in bias resistors R1 and R2 (typical 22 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configuration without use of external
resistors.
DESCRIPTION
PNP resistor equipped transistor in an SC-89 (SOT490)
plastic package.
MARKING
TYPE NUMBER
PDTA124EEF
MARKING CODE
3R
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
handbook, halfpage 3
3
R1
1
R2
1
2
2
Top view
MAM413
Fig.1 Simplified outline (SC-89; SOT490)
and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO
ICM
Ptot
Tstg
Tj
Tamb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
2001 Jun 11
2
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
+10
V
−
−40
V
−
−100
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
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