2SD1163 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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2SD1163

NPN Silicon Epitaxial Power Transistor

Thinki Semiconductor Co., Ltd. 

2SD1163/2SD1163A

®

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SD1163

2SD1163A

IC=10mA ;RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=10mA ;IC=0

VCEsat

Collector-emitter

saturation voltage

2SD1163

2SD1163A

IC=5A, IB=0.5A

VBEsat Base-emitter saturation voltage

IC=5A, IB=0.5A

ICBO

Collector

cut-offcurrent

2SD1163 VCB=300V;IE=0

2SD1163A VCB=350V;IE=0

hFE

DC current gain

IC=5A ; VCE=5V

Switching times

tf

Fall time

ICM=3.5A;IB1 =0.45A

MIN TYP MAX UNIT

120

V

150

6

V

2.0

V

1.0

1.2

V

5

mA

5

mA

25

0.5

μs

© 2006 Thinki Semiconductor Co.,Ltd.

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