BDX33 데이터 시트보기 (PDF) - Comset Semiconductors

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BDX33

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Comset Semiconductors 

NPN BDX33 – BDX33A – BDX33B – BDX33C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

VCER(SUS)

Collector-Emitter

Sustaining Voltage (*)

VCEV(SUS)

Collector-Emitter

Sustaining Voltage (*)

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

ICBO

Collector-Base Cutoff

Current

Test Condition(s)

Min Typ Max Unit

BDX33

45 -

-

IC=100 mA

BDX33A 60 -

BDX33B 80 -

-

-

V

BDX33C 100 -

-

BDX33

45 -

-

IB=100 mA,

RBE=100Ω

BDX33A 60 -

BDX33B 80 -

-

-

V

BDX33C 100 -

-

BDX33

45 -

-

IC=100 mA

VBE=-1.5 V

BDX33A 60 -

BDX33B 80 -

-

-

V

BDX33C 100 -

-

VCB=22V

BDX33

-

-

VCB=30V

VCB=40V

BDX33A -

BDX33B -

-

-

0.5

VCB=50V

BDX33C -

-

VCB=22V, TC=100°C BDX33

-

-

mA

VCB=30V, TC=100°C BDX33A

-

VCB=40V, TC=100°C BDX33B

-

-

-

10

VCB=50V, TC=100°C BDX33C

-

-

BDX33

BDX33A

BDX33B

VBE=-5 V

BDX33C

BDX33

-

- 5.0 mA

BDX33A

BDX33B

BDX33C

VCBO=45 V

BDX33

-

-

VCBO=60 V

VCBO=80 V

BDX33A -

BDX33B -

-

-

0.2 mA

VCBO=100 V

BDX33C -

-

23/10/2012

COMSET SEMICONDUCTORS

2/4

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