Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW42
DESCRIPTION
·With TO-220C package
·Complement to type BDW47
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For general purpose and low speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current-DC
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
100
100
5
15
0.5
85
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.47
UNIT
℃/W