2SK3289 데이터 시트보기 (PDF) - Renesas Electronics

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2SK3289

Silicon N Channel MOS FET High Speed Switching

Renesas Electronics 

2SK3289

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 1.26Ω typ. (at VGS =10V , ID =150mA)

RDS = 2.8Ω typ. (at VGS =4V , ID =50mA)

• 4V gate drive device

• Small package (CMPAK)

Outline

CMPAK

3

D

G

S

ADE-208-743B(Z)

Target Specification 3rd.Edition.

December 1998

1

2

1. Source

2. Gate

3. Drain

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