SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
FEATURES
ᴌComplementary to MPSA13/14.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base
Voltage
MPSA62
MPSA63/64
Collector-Emitter
Voltage
MPSA62
MPSA63/64
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
RATING
-20
-30
-20
-30
-10
-500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
MPSA62/63/64
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Emitter
Breakdown Voltage
MPSA62
MPSA63/64
V(BR)CES
Collector Cut-off
Current
MPSA62
MPSA63/64
ICBO
Emitter Cut-off Current
IEBO
MPSA62
MPSA63
DC Current Gain
MPSA64
hFE
MPSA63
MPSA64
Collector-Emitter
Saturation Voltage
MPSA62
MPSA63/64
VCE(sat)
MPSA62
Base Emitter Voltage
VBE
MPSA63/64
Current Gain
Bandwith Product
MPSA63/64
fT
*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2%
TEST CONDITION
IC=-0.1mA, IB=0
VCB=-15V, IE=0
VCB=-30V, IE=0
VEB=-10V, IC=0
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-10mA, IB=-0.01mA
IC=-100mA, IB=-0.1mA
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-10mA, f=100MHz, VCE=-5V
MIN.
-20
-30
-
-
20,000
5,000
10,000
10,000
20,000
-
-
-
-
125
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-0.1
-0.1
-
-
-
-
-
-1.0
-1.5
-1.4
-2.0
-
UNIT
V
ỌA
ỌA
V
V
MHz
1999. 11. 30
Revision No : 3
1/2