TIP110 데이터 시트보기 (PDF) - Inchange Semiconductor
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TIP110 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP110
TIP111
TIP112
IC=30mA, IB=0
VCEsat Collector-emitter saturation voltage IC=2A ,IB=8mA
VBE
Base-emitter on voltage
IC=2A ; VCE=4V
ICBO
Collector
cut-off current
TIP110
TIP111
TIP112
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
ICEO
Collector
cut-off current
TIP110
TIP111
TIP112
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
Product Specification
TIP110/111/112
MIN TYP. MAX UNIT
60
80
V
100
2.5
V
2.8
V
1
mA
1000
500
2
mA
2
mA
100
pF
2
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