BSP31 데이터 시트보기 (PDF) - Philips Electronics
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BSP31 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BSP31; BSP32; BSP33
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Telephony and general industrial applications.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BSP41 and BSP43.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSP31
BSP32; BSP33
VCEO
collector-emitter voltage
BSP31
BSP32; BSP33
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb = 25 °C; note 1
MIN.
MAX.
UNIT
−
−70
V
−
−90
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−2
A
−
−200
mA
−
1.3
W
−65
+150
°C
−
150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 26
2
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