MPSL51 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MPSL51 Datasheet PDF : 7 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VCE = 5.0 V, IC = 50 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
fT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, f = 1.0 MHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
VCE = 10 V, IC = 10 mA,
100
V
100
V
4.0
V
1.0
µA
100
nA
40
250
0.25
V
0.3
V
1.2
V
1.2
V
8.0
pF
20
60
MHz
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