BC856BLT3G(2009) 데이터 시트보기 (PDF) - ON Semiconductor

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BC856BLT3G
(Rev.:2009)

General Purpose Transistors PNP Silicon

ON Semiconductor 

BC856ALT1G Series

1.0

0.7

0.5 D = 0.5

0.2

0.3

0.2

0.05

0.1

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.5

SINGLE PULSE

SINGLE PULSE

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0 2.0

5.0 10 20

50 100 200

t, TIME (ms)

Figure 13. Thermal Response

ZqJC(t) = r(t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

500 1.0 k 2.0 k

5.0 k 10 k

-200

-100

-50

-10

-5.0

-2.0

-1.0

1s

3 ms

TA = 25°C TJ = 25°C

BC558, BC559

BC557

BC556

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

The safe operating area curves indicate IC−VCE limits of

the transistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or

TA is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)

may be calculated from the data in Figure 13. At high case or

ambient temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by the secondary breakdown.

-5.0 -10

-30 -45 -65 -100

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

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