IRF640 데이터 시트보기 (PDF) - First Components International
부품명
상세내역
제조사
IRF640 Datasheet PDF : 5 Pages
| |||
IRF640 18A 200V N CHANNEL POWER MOSFET
Description
Mechanical Dimensions
G
DS
TO-220AB
DIMENSION IN MM
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds
Low RDS(on) to Minimize On-Losses. Specified at Elevated
Temperature
Rugged – SOA is Power Dissipation Limited
Source-to-Drain Characterized for Use With Inductive
Loads
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
Value
18
72
±20
±40
125
1.00
-55 to 150
224
1.00
62.5
260
Unit
A
V
V
W
W/к
к
mJ
к/W
к
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
Share Link: 